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30 July 2002 Simulation and characterization of silicon oxynitrofluoride films as a phase-shift mask material for 157-nm optical lithography
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Abstract
Silicon oxynitrofluoride has been studied as a new candidate material for High Transmittance Attenuated Phase Shift Mask (HT-Att-PSM). The requirements of HT-Att-PSM are 20 +/- 5% transmittance and 180 degree(s) phase shift at the exposure wavelength (157 nm) and less than 40% transmittance at the inspection wavelength (193 nm). Si-O-N-F films were deposited with the change of process parameters such as gas flow rate and deposition time to find optimum conditions to meet above requirements. In this study, effects of process parameters on the optical properties of Si-O-N-F films were examined. To satisfy the requirements of HT-Att-PSM, a new mask structure was suggested and analyzed.
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SungKwan Kim, Eunchul Choi, Hyoungdo Kim, Jungmin Kim, and Kwangsoo No "Simulation and characterization of silicon oxynitrofluoride films as a phase-shift mask material for 157-nm optical lithography", Proc. SPIE 4691, Optical Microlithography XV, (30 July 2002); https://doi.org/10.1117/12.474558
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