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12 July 2002 Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography
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Abstract
At its conception, 193 nm lithography was thought to be the best way to take optical lithography to the 180 nm node. It was expected that 193 nm could support the now-defunct 160 nm node before optical lithography would have to yield to an undetermined non-optical solution. Today, 193 nm must compete with 248 nm for the 130 nm node and is expected to support lithography until it is replaced by 157 nm at the 70 nm node. Given the challenges facing 157 nm, it is likely that lithographers will attempt to extend the utility of 193 nm to its theoretical limits.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
John S. Petersen, James V. Beach, David J. Gerold, and Mark John Maslow "Developing an integrated imaging system for the 70-nm node using high numerical aperture ArF lithography", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475664
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