GOI characterization of 300-mm furnace tools

Karl E. Mautz

doi:10.1117/12.475654

12 July 2002 GOI characterization of 300-mm furnace tools

Karl E. Mautz

Proceedings Volume 4692, Design, Process Integration, and Characterization for Microelectronics; (2002) https://doi.org/10.1117/12.475654
Event: Design, Process Integration, and Characterization for Microelectronics, 2002, Santa Clara, CA, United States

Abstract

The purpose of this characterization was to gain an initial understand of the gate oxide integrity (GOI) differences on wafers processed in the 300mm furnace tools at SC300, a joint venture between Motorola and Infineon Technologies for 300mm wafer, process and equipment development, compared to similarly processed 200mm wafers at Motorola. Measurements were done using mercury probe tools located at different sites to characterize the various gate oxide films and thicknesses. Separately, a study was done on defectivity levels of the Epi-layered 300mm wafers used in this study.

Citation Download Citation

Karl E. Mautz "GOI characterization of 300-mm furnace tools", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475654

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