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Abstract
The purpose of this characterization was to gain an initial understand of the gate oxide integrity (GOI) differences on wafers processed in the 300mm furnace tools at SC300, a joint venture between Motorola and Infineon Technologies for 300mm wafer, process and equipment development, compared to similarly processed 200mm wafers at Motorola. Measurements were done using mercury probe tools located at different sites to characterize the various gate oxide films and thicknesses. Separately, a study was done on defectivity levels of the Epi-layered 300mm wafers used in this study.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karl E. Mautz "GOI characterization of 300-mm furnace tools", Proc. SPIE 4692, Design, Process Integration, and Characterization for Microelectronics, (12 July 2002); https://doi.org/10.1117/12.475654
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