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29 June 1984 Fine Line Patterning Of Al, Polysilicon, And Polycide
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Patterning of 1.0-2.0 μm features in polysilicon, TaSi2,/polysilicon (polycide) and aluminum films requires highly directional and selective etching techniques. Chlorine based reactive ion etching in a hexagonal cathode reactor can be used to achieve these profile control goals. The major factors affecting the degree of etch directionality in this system are the dc self bias voltage and etch rate. For example, anisotropic etching of Al can be performed in BC13/C12 plasmas at a dc self bias of -200 V. As this voltage is lowered, the lateral etch rate increases with respect to the vertical etch rate giving a nearly isotropic line profile at -100 V. At a given dc self bias voltage, anisotropic etching is favored by low etch rates. A similar voltage and etch rate dependence is found for etching of polycide in BC13/C12 plasmas. Polysilicon etching in C12/SF6 plasmas displays the etch rate dependence without the voltage dependence. In each process selectivity for SiO2 and photoresist degrades as the dc self bias potential becomes more negative.
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R W Light, H B Bell, and H A Macrc "Fine Line Patterning Of Al, Polysilicon, And Polycide", Proc. SPIE 0470, Optical Microlithography III: Technology for the Next Decade, (29 June 1984);

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