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11 July 2002 Development of micromachined RF switches with piezofilm actuation
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Abstract
Current developments in RF systems require high-performance switches for applications including signal routing, impedance matching and adjustable gain amplifiers. The use of micro-switches to replace traditional semiconductor components is increasingly common, because of their advantages in terms of electrical isolation and power loss. This paper reports on a research program relating to the development of a silicon micro-machined RF micro-switch that uses thin-film piezoelectric material for actuation. Piezoelectric actuation has potential advantages over electrostatic actuation in terms of achievable forces and simplicity of structural design. This paper gives an overview of the design and analysis of a prototype switch. The design concept, based on a cantilevered silicon beam or plate, is described. A low order mathematical model, incorporating the mechanical and electrical characteristics of the switch and the interaction between the silicon structure and the piezo-drive is summarized. This allows the basic behavior of the switch to be quantified, and provides a useful tool for design and optimization purposes. The outline design and manufacture/processing of a prototype switch is discussed.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Colin H.J. Fox, Xuesheng Chen, Hong Wen Jiang, Paul B. Kirby, and Stewart McWilliam "Development of micromachined RF switches with piezofilm actuation", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); https://doi.org/10.1117/12.475052
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