Identification of anisoelasticity for electrostatic trimming of rate-integrating gyroscopes

Chris C. Painter; Andrei M. Shkel

doi:10.1117/12.475027

11 July 2002 Identification of anisoelasticity for electrostatic trimming of rate-integrating gyroscopes

Chris C. Painter, Andrei M. Shkel

Proceedings Volume 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology; (2002) https://doi.org/10.1117/12.475027
Event: SPIE's 9th Annual International Symposium on Smart Structures and Materials, 2002, San Diego, California, United States

Abstract

This paper describes a technique for detection of anisoelasticities in rate integrating gyroscopes as part of a self-calibrative control architecture. In contrast to laser trimming typically done in post processing to compensate for structural imperfections, the on-chip control architecture uses feedforward voltage control to tune the non-linear negative spring effects inherent in parallel plate electrodes in order to electrostatically 'trim' the structural non-idealities. As the first steps toward the feedforward control realization, we present three different algorithms that can be implemented on-chip for identification of structural anisoelasticities. The first technique utilizes the results of measured static displacements, requiring precise knowledge of displacements and applied forces. The second technique involves solving for the non-ideal stiffness parameters using Principal Component Analysis and Fourier transforms of the dynamic system response. The last technique embellishes on the second by the addition of an energy compensation control to overcome damping effects in low Q systems. Finally, the implementation of this algorithm in the electrostatic trimming' of structural imperfections is discussed.

Citation Download Citation

Chris C. Painter and Andrei M. Shkel "Identification of anisoelasticity for electrostatic trimming of rate-integrating gyroscopes", Proc. SPIE 4700, Smart Structures and Materials 2002: Smart Electronics, MEMS, and Nanotechnology, (11 July 2002); https://doi.org/10.1117/12.475027

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