Paper
15 July 2002 Double bridge technique for temperature compensation of piezoresistive pressure sensor
Po-Tsung Hsieh, Y. M. Chang, J. M. Xu, Chii-Maw Uang
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Abstract
A main problem associated with piezoresistive pressure sensors is the cross sensitivity sensed among different temperature. The influence of temperature is manifested as a change in the span and offset of the sensor output. In this paper, a new temperature compensation technique for a silicon pressure sensor is presented. We combine two sensors, the piezoresistive bridge and the compensation one, together to instead of the original single piezoresistive pressure sensor circuit. There are many advantages of using the configured double bridge technique, such as eliminates the zero pressure offset, compensates for the output variation, and gives the sensor extreme low drift of the temperature. Besides, it covers a wider temperature and pressure range, reduce the prime cost of sensors, and lessen the size of finished products. The simulation and experimental results are matched to our theoretical analysis. The feasibility of the new configure is proved.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Po-Tsung Hsieh, Y. M. Chang, J. M. Xu, and Chii-Maw Uang "Double bridge technique for temperature compensation of piezoresistive pressure sensor", Proc. SPIE 4701, Smart Structures and Materials 2002: Smart Structures and Integrated Systems, (15 July 2002); https://doi.org/10.1117/12.474700
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CITATIONS
Cited by 3 scholarly publications.
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KEYWORDS
Sensors

Bridges

Wheatstone bridges

Silicon

Temperature metrology

Resistors

Resistance

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