Amorphous Silicon As An Inorganic Resist

P H La Marche; R. Levi-Setti

doi:10.1117/12.942323

18 June 1984 Amorphous Silicon As An Inorganic Resist

P H La Marche, R. Levi-Setti

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942323
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Negative tone images have been produced directly in glow discharge deposited amorphous silicon hydride by selective gallium-ion implantation. Like crystalline silicon, amorphous silicon exhibits a greatly reduced etch rate in aqueous caustic solutions when implanted with doses in excess of about 1013 Ga ions/cm2. The amorphous silicon behaves as a negative resist with a threshold sensitivity of about 1 pC/cm2. This material is particularly attractive as a possible masking material for ultra-violet light due to its high absorption properties in this wavelength region, low relative cost and the ease by which it can be deposited on a wide range of materials.

Citation Download Citation

P H La Marche and R. Levi-Setti "Amorphous Silicon As An Inorganic Resist", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942323

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available