Si MOSFET Fabrication Using Focused Ion Beams

R L Kubena; J Y Lee; R A Jullens; R G. Brault; P L Middleton; E H Stevens

doi:10.1117/12.942315

18 June 1984 Si MOSFET Fabrication Using Focused Ion Beams

R L Kubena, J Y Lee, R A Jullens, R G. Brault, P L Middleton, E H Stevens

Proceedings Volume 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III; (1984) https://doi.org/10.1117/12.942315
Event: 1984 Microlithography Conferences, 1984, Santa Clara, United States

Abstract

Submicrometer focused ion beams have been used both for the maskless ion implantation of p-channel depletion-mode Si MOSFETs and for the gate lithography of n-channel enhancement-mode Si MOSFETs. B-Pt and Au-Si liquid-metal-alloy ion sources were utilized in a single-lens focusing column for the implantation and lithography steps, respectively. An 800-A-thick Al stopping layer was used at the target to separate the lighter ions from the heavier ion species in the beams. Reasonable dc electrical characteristics were measured for the chosen device process parameters.

Citation Download Citation

R L Kubena, J Y Lee, R A Jullens, R G. Brault, P L Middleton, and E H Stevens "Si MOSFET Fabrication Using Focused Ion Beams", Proc. SPIE 0471, Electron-Beam, X-Ray, and Ion-Beam Techniques for Submicrometer Lithographies III, (18 June 1984); https://doi.org/10.1117/12.942315

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available