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5 August 2002 HgCdTe focal plane arrays formed by heterojunction epitaxy and boron implantation
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Abstract
Shortwave, midwave, and longwave HgCtTe focal plane arrays with a format of 320x256 have been produced by both heterojunction epitaxy and boron implantation techniques. In general, the heterojunction diodes and arrays with a p-on-n polarity have high diode RoAs at high temperatures, while the boron implanted diodes and arrays with an n-on-p polarity have high diode RoAs at lower temperatures and better array operability because of excellent diode surface passivation. Diodes with wavelength longer than 20 micrometers have been produced. The 320x256 HgCdTe arrays have been fabricated and hybridized to readout integrated circuit chips ISC 9705 and ISC 9809 designed by Indigo Systems Inc. Imaging pictures were taken by cameras equipment with these array hybrids. The array operability depends on the hybrid operating temperature. For heterojunction arrays, the best operability of 2.5micrometers arrays at 200K is over 98%, while the best operability of 9.7micrometers arrays at 77K is over 96%. The operability of n-on-p arrays hybridized to ISC9809 cannot be determined because the readout circuit is not specifically designed for arrays with this polarity. However, testing results indicate that with proper readout chips, array operablity over 99% can be achieved with boron- implanted arrays.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Muren Chu, Shoghig Mesropian, H. K. Gurgenian, Sevag Terterian, and C. C. Wang "HgCdTe focal plane arrays formed by heterojunction epitaxy and boron implantation", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002); https://doi.org/10.1117/12.478851
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