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5 August 2002 Optimization of design and technology for uncooled poly-SiGe microbolometer arrays
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The performance characteristics of polycrystalline SiGe microbolometer arrays are the subject of both design and technological optimizations performed in this work to move the arrays towards the production. An NETD of 90 mK at a time constant of 11 ms is already achievable for the best non-optimized 60 micrometers pixel, 0.26 micrometers thick bolometer design in a linear 128 pixel array according to the results of LWIR characterization. The performance of linear 32, 64 and 128 element arrays of 50-, 60- and 75-micrometers pixel bolometers made with 0.26...0.13 micrometers thin poly-SiGe on several wafer runs was the starting point for the computer simulation of detector features and evolution of its characteristics under reading bias pulses. The material properties and parameters of read-outs are taken into account in the optimization of the design parameters of arrays as well. The typical bolometer characteristics achieved on the latest wafer run if processed with the PC-program accounting for the read-out and heating effects, result in an average NETD of 70 mK at a time constant of 17 ms for 50 micrometers pixels in a 320x240 array. Despite less TCR-to-1/f noise ratio as compared with VOx arrays, the several advantages make poly-SiGe a very attractive candidate for an uncooled array, i.e. full compatibility with CMOS technology, better characteristics/price ratio, resistance nonuniformity s/mean <0.2%, and a possibility to release extra-thin structures.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir Nikolaevic Leonov, Natalia A. Perova, Jan P. Vermeiren, Bob Grietens, Claus Goessens, Piet De Moor, and Chris A. Van Hoof "Optimization of design and technology for uncooled poly-SiGe microbolometer arrays", Proc. SPIE 4721, Infrared Detectors and Focal Plane Arrays VII, (5 August 2002);

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