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24 July 2002 Injected semiconductor laser
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Proceedings Volume 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems; (2002) https://doi.org/10.1117/12.475957
Event: XVII International Conference on Coherent and Nonlinear Optics (ICONO 2001), 2001, Minsk, Belarus
Abstract
The response of a single mode semiconductor laser to an injected external signal has been studied. The control parameters are the power and the frequency of the injected signal together with the gain of the laser. The injected power varies from 6 down to -120 dBm. Following the magnitude of these control parameters many phenomena can be observed. When both injected field and laser eigenfield are of the same order of magnitude they compete in a non-linear way, leading to frequency generation, push-pull effects, hysteresis phenomena and chaos. For weak dBm the laser behaves with the injected field in the same way as it does for the spontaneous emission which is its natural source. We describe the role of the injected laser as a filter and an amplifier in this case. It follows that the laser can be used to process information in ways that are not yet completely exploited.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
S. Blin, Guy Michel Stephan, Laurent Renaud Gabet, Patrice Feron, Francoise Lissillour, and Pascal Besnard "Injected semiconductor laser", Proc. SPIE 4751, ICONO 2001: Nonlinear Optical Phenomena and Nonlinear Dynamics of Optical Systems, (24 July 2002); https://doi.org/10.1117/12.475957
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