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1 August 2002 Application of AlSi-based materials on approach of chemical stability of embedded layer for bilayer attenuated phase-shifting mask in 193-nm lithography
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476985
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
Abstract
AlSi-based films could be formed by a combination of transparent chemical compositions and absorbing elements. When the oxide structure increased with the increasing of atomic percentage of oxygen, the n of AlSixOy appeared to increase while k appeared to decrease in 193 nm. The saturation of formation of AlN and Si3N4 in AlSixNy was observed about 4.8 sccm N2 flow rate. The correlation between optical properties and chemical compositions of AlSi-based films has been described, therefore, the chemical stability of embedded material could be approached. Top layer film with saturation of AlN, Si3N4 or Al2O3, SiO2 could provide better chemical stability. Bottom layer with suitable mount of Al and Si chemical structure could provide enough light absorption. With proper combination of top and bottom layer AlSixOy and AlSixNy embedded material, the optical properties of bi-layer attenuated phase-shifting mask could kept in the range of high transmittance. The 0.18-micrometers -line/space NEB-22 resist pattern exposed by e-beam writer on AlSixOy embedded layer has good resolution. Due to good resist profile, the 0.3-micrometers -line/space etched pattern of bi-layer AlSixOy was also successfully carried out.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Cheng-Ming Lin and Wen-An Loong "Application of AlSi-based materials on approach of chemical stability of embedded layer for bilayer attenuated phase-shifting mask in 193-nm lithography", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476985
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