Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system

Takehiro Kondoh; Masamitsu Itoh; Toshiyuki Kai

doi:10.1117/12.476936

1 August 2002 Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system

Takehiro Kondoh, Masamitsu Itoh, Toshiyuki Kai

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476936
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

This report shows characteristics of a new negative-tone CAR (MES-EN1G), that we have developed. The CAR is adopted new cross linker that is concentrated more at the bottom of the resist film. The new cross linker raises cross-linking reaction rate at the bottom of resist film. Therefore, undercut profile on chromium film is not observed and vertical resist profile is obtained. The CAR can resolve 150 nm L and S pattern, and so the CAR has the ability to form assist bar feature. Vertical chromium profile is obtained and residual resist thickness is 260 nm after reactive ion etching. The CAR has enough etching durability. Regarding post exposure delay stability in vacuum (PED(Vac.), CD change is 0.3 nm even if exposed mask is left in vacuum for 10 hours. Dependence on PEB temperature is 3.0nm / degrees C. Regarding post coating delay (PCD) effect, the maximum CD error is within +/- 5.0 nm even though masks coated with the CAR are left in a conventional blanks case for 39 days. Dependence on fogging effect is 4.1 nm /percent. Opaque line CD uniformity (3s) of 600 nm L and S pattern in local area with MES-EN1G and with positive-tone CAR is 4.6 nm and 11.9 nm, respectively.

Citation Download Citation

Takehiro Kondoh, Masamitsu Itoh, and Toshiyuki Kai "Characteristics of negative-tone chemically amplified resist (MES-EN1G) for 50-keV EB mask writing system", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476936

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