Comparing photomask and wafer post-develop defect formation

Adam Smith; William A. Aaskov; Stephen E. Knight; Robert K. Leidy; Andrew J. Watts

doi:10.1117/12.477006

1 August 2002 Comparing photomask and wafer post-develop defect formation

Adam Smith, William A. Aaskov, Stephen E. Knight, Robert K. Leidy, Andrew J. Watts

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.477006
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

The reduction of post-develop defects in photomask making is significantly more critical than in wafer processing. While wafers can afford to experience some level of defect density, photomasks are required to be defect free. Defect density learning in photomask making is expensive and time-consuming given the material and exposure time costs. In a wafer fab, it is much easier to run factorial experiments to get large amounts of data in a short amount of time. Some photomask making and wafer processing defect generation mechanisms are the same. Here a study of the formation of resist material residues during develop will be compared between photomask and wafer processing. Wafer processing experience will provide insight into photomask post-develop defect formation. Several options for the elimination of this defect type will be discussed. Differences in implementation strategies between photomask makers and wafer lithographers will also be discussed.

Citation Download Citation

Adam Smith, William A. Aaskov, Stephen E. Knight, Robert K. Leidy, and Andrew J. Watts "Comparing photomask and wafer post-develop defect formation", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.477006

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