Comparison and correlation of VSS simulation results using images from different inspection systems

Kevin Hung; Denis Lin; Rex L. Chou; Samuel C. Yang; Don Lee; Alex Tseng; Hiromasa Unno; Jiunn-Hung Chen; Jason H. Huang

doi:10.1117/12.476967

1 August 2002 Comparison and correlation of VSS simulation results using images from different inspection systems

Kevin Hung, Denis Lin, Rex L. Chou, Samuel C. Yang, Don Lee, Alex Tseng, Hiromasa Unno, Jiunn-Hung Chen, Jason H. Huang

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476967
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

As photolithography is moving forwards to finer resolution, mask-making requirements also becomes much more stringent than before so as to compensate the gradually compressed process window on wafer. IN addition to requiring tighter CD specification , the defect disposition on mask is the most controversial issue needed to address by mask makers. As everybody knows, the defect problems are always the argument points after shipping between mask houses and wafer fabs. And the defect specifications defined by defect size are also no longer effective under complex environments of aggressive OPC features. To face the challenge under this environment many mask makers and mask users are turning to simulation-based photomask qualification. Comparing with hardware-based AIMS measurement, Virtual Stepper System (VSS) easy operation and flexibility become more attractive for users. How to apply the VSS into the production line becomes an emerging issue for mask makers and mask users. In general, mask-houses to keep the production line having satisfied inspection capability and cost-efficient. Although VSS can be completely connected with the sate-of-the-art tools from different companies, the simulation accuracy still needs to be evaluated to unify the criterion of defect judgement. Because VSS makes the simulation according to the captured mask image, the simulation results are strongly dependent on the quality of the providing images. Mix-and- match verification on VSS simulation between different inspection systems has been done in this study to give a reasonable criterion for simulation-based photomask qualification.

Citation Download Citation

Kevin Hung, Denis Lin, Rex L. Chou, Samuel C. Yang, Don Lee, Alex Tseng, Hiromasa Unno, Jiunn-Hung Chen, and Jason H. Huang "Comparison and correlation of VSS simulation results using images from different inspection systems", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476967

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
7 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Photomasks

Semiconducting wafers

Inspection

Critical dimension metrology

Printing

Defect inspection

Optical lithography

Show All Keywords

Keywords/Phrases

Search In:

Publication Years