Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

Mark Mueller; Serguie Komarov; Ki-Ho Baik

doi:10.1117/12.476954

1 August 2002 Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist

Mark Mueller, Serguie Komarov, Ki-Ho Baik

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476954
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Photo mask etching for the 100nm technology node places new requirements on dry etching processes. As the minimum-size features on the mask, such as assist bars and optical proximity correction (OPC) patterns, shrink down to 100nm, it is necessary to produce etch CD biases of below 20nm in order to reproduce minimum resist features into chrome with good pattern fidelity. In addition, vertical profiles are necessary. In previous generations of photomask technology, footing and sidewall profile slope were tolerated, since this dry etch profile was an improvement from wet etching. However, as feature sizes shrink, it is extremely important to select etch processes which do not generate a foot, because this will affect etch linearity and also limit the smallest etched feature size. Chemically amplified resist (CAR) from TOK is patterned with a 50keV MEBES eXara e-beam writer, allowing for patterning of small features with vertical resist profiles. This resist is developed for raster scan 50 kV e-beam systems. It has high contrast, good coating characteristics, good dry etch selectivity, and high environmental stability. Chrome etch process development has been performed using Design of Experiments to optimize parameters such as sidewall profile, etch CD bias, etch CD linearity for varying sizes of line/space patterns, etch CD linearity for varying sizes of isolated lines and spaces, loading effects, and application to contact etching.

Citation Download Citation

Mark Mueller, Serguie Komarov, and Ki-Ho Baik "Dry etching of chrome for photomasks for 100-nm technology using chemically amplified resist", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476954

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