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1 August 2002 Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography
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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002)
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan
TaSiOx is expected to be the most effective film material for use in attenuated phase shifting masks (Att-PSMs), in terms of both its durability under irradiation and its lithographic performance in 157-nm lithography. In this study, we optimized the transmittance of 5.5 percent and evaluated the effectiveness of TaSiOx by both aerial image simulation and exposure experiment in order to evaluate the material's potential for 157 nm lithography. Through the aerial image simulation, it was confirmed that aerial image intensity of side lobes was less than half of that needed for resolving patterns by transmittance of 5.5 percent. In an exposure experiment, the resolution, depth of focus (DOF), and mask error enhancement factor (MEEF) were evaluated for hole patterns. The result of this evaluation was that we were able to fabricate a pattern of 100-nm diameter isolated holes without side lobes and obtain a better than 200-nm DOF and MEEF greater than three with a 5.5 percent TaSiOx type Att-PSM. This study has confirmed that TaSiOx type Att-PSMs have strong potential for application in the fabrication of 100-nm hole patterns by 157-nm lithography.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kunio Watanabe, Osamu Yamabe, Noriyoshi Kanda, J. Kim, Noboru Uchida, Shigeo Irie, Toshifumi Suganaga, and Toshiro Itani "Feasibility study of TaSiOx-type Att-PSM for 157-nm lithography", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002);

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