Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node

Darren Taylor; Anthony Vacca; Larry S. Zurbrick

doi:10.1117/12.476917

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1 August 2002 Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node

Darren Taylor, Anthony Vacca, Larry S. Zurbrick

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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476917
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

With the approach of the 100nm-lithography node, an accurate and reliable method of measuring reticle pinhole defects becomes necessary to assess the capabilities of high-end reticle inspection equipment. The current measurement method of programmed defect pinholes consists of using a SEM. While this method is repeatable, it does not reliably represent the true nature of a pinhole. Earlier studies have suggested that since the SEM images only a top down view of the pinhole, the measurement does not accurately account for edge wall angle and partial filling which both reduce pinhole transmission and subsequent printability. Since wafer lithography and reticle inspection tools use transmitted illumination, pinhole detection performance based on SEM measurements is often erroneous. In this study, a pinhole test reticle was manufactured to further characterize the capabilities of a transmission method to measure pinholes.

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Darren Taylor, Anthony Vacca, and Larry S. Zurbrick "Improved method for measuring and assessing reticle pinhole defects for the 100-nm lithography node", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476917

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