Improvement of critical dimension stability of chemically amplified resist by overcoat

Teruhiko Kumada; Atsuko Sasahara; Kazuyuki Maetoko; Kunihiro Hosono; Takemichi Honma; Yuji Kodaira; Yukio Nakashiba; Masaoshi Tsuzuki; Yasutaka Kikuchi

doi:10.1117/12.476955

1 August 2002 Improvement of critical dimension stability of chemically amplified resist by overcoat

Teruhiko Kumada, Atsuko Sasahara, Kazuyuki Maetoko, Kunihiro Hosono, Takemichi Honma, Yuji Kodaira, Yukio Nakashiba, Masaoshi Tsuzuki, Yasutaka Kikuchi

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476955
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

The critical dimensions (CD) change by the process delay is the most critical issue to use the chemically amplified resists (CAR) for photomask fabrication. In the photo-mask fabrication processes, the resist should have both post coating delay (PCD) and post exposure delay (PED) stability, while keeping higher sensitivity. To achieve this requirement, overcoat process has been examined for the purpose of CD stabilization in CAR process for photomask manufacture. The material, which consists of hydrophobic polymer and photo acid generator (PAG), was used for the overcoat in this study. It has been proved that the overcoat shows the effect of controlling CD change, and applying the overcoat does not generate a fatal number of defects and pinholes. From these results, it is thought that the overcoat process is promising for the size stabilization in photomask manufacture for 100 nm devices.

Citation Download Citation

Teruhiko Kumada, Atsuko Sasahara, Kazuyuki Maetoko, Kunihiro Hosono, Takemichi Honma, Yuji Kodaira, Yukio Nakashiba, Masaoshi Tsuzuki, and Yasutaka Kikuchi "Improvement of critical dimension stability of chemically amplified resist by overcoat", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476955

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