New energy flux method for inspection of contact layer reticles

William Waters Volk; Hector I. Garcia; Charika Becker; George Chen; Sterling G. Watson

doi:10.1117/12.476918

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1 August 2002 New energy flux method for inspection of contact layer reticles

William Waters Volk, Hector I. Garcia, Charika Becker, George Chen, Sterling G. Watson

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Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476918
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

With growing implementation of low k1 lithography on DUV scanners for wafer production, detecting and analyzing photomask critical dimension (CD) errors and semitransparent defects is vital for qualifying photomasks to enable high IC wafer yields for 130nm and 100nm nodes. Using the TeraStarTM pattern inspection system's image computer platform, a new algorithm, TeraFluxTM, has been implemented and tested for the inspection of small 'closed' features. The current algorithm is run in die-to-die mode and compares the energy flux differences on features between die for small closed features, such as, contacts, trenches, and cells on chrome and half-tone reticles. Tests show the new algorithm provides CD error detection to 5 percent energy flux variation with low false defect counts. The dispositioning of very small CD errors typically requires the precision and resolution of a CD-SEM. A new capability has been developed for review of very small CD errors for this application, which displays the energy flux difference between any corresponding closed features on different die. We have characterized the sensitivity and false defect performance of the new energy flux algorithm with production masks and programmed defect test masks. The program defect test mask contains two sets of contacts at 600nm and 800nm design sizes. At each design size there are six defect types in both dense and sparse geometry. The programmed defects are designed to have 1 percent energy increments for defect sizes from 1 percent to 10 percent, and 2 percent energy increments from 10 percent to 30 percent. A sampling of inspection results will be presented. SEM measurements were taken at programmed defect locations to develop a correlation between the energy flux difference and the measured CD.

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William Waters Volk, Hector I. Garcia, Charika Becker, George Chen, and Sterling G. Watson "New energy flux method for inspection of contact layer reticles", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476918

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