New resolution enhancement method realizing the limit of single mask exposure

Kenji Yamazoe; Masanobu Hasegawa; Kenji Saitoh; Akiyoshi Suzuki

doi:10.1117/12.477002

1 August 2002 New resolution enhancement method realizing the limit of single mask exposure

Kenji Yamazoe, Masanobu Hasegawa, Kenji Saitoh, Akiyoshi Suzuki

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.477002
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

IDEALSmile is introduced as a new exposure technique that realizes k₁ equals 0.29. In this paper IDEALSmile is targeted for contact hole patterns (C/H). The results validate that it is possible to simultaneously expose not only k₁ equals 0.32 half-pitch dense and isolated C/H patterns, but also different pitches using Canon FPA- 5000ES3, which is impossible by conventional methods. Since these results are obtained using a binary mask and modified illumination with single exposure, there are no concerns with regards to a decease in throughput and an increase in cost of ownership. However, one of the issues in fabricating C/H patterns is the mask error enhancement factor (MEEF). Our simulation ha shown that IDEALSmile exhibits good MEEF. Although there are questions regarding optical microlithography for critical C/H patterning, the IDEALSmile exposure method has the potential to be the solution. By attaining k₁ equals 0.32, printing 100nm C/H patterns can be achieved with a single exposure using KrF lithography, such as the Canon FPA-5000ES4. Furthermore the IDEALSmile technique using ArF or F2 lithography will be effective for C/H patterns below the 100nm node. There is no doubt that optical microlithography will continue for some time.

Citation Download Citation

Kenji Yamazoe, Masanobu Hasegawa, Kenji Saitoh, and Akiyoshi Suzuki "New resolution enhancement method realizing the limit of single mask exposure", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.477002

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