Pattern fidelity improvement by considering the underlying patterns at defocus

Karl Chiou; Jerry Huang; S. Lee; Chih Yu Lee; Nail Tang; Janet Peng

doi:10.1117/12.476987

1 August 2002 Pattern fidelity improvement by considering the underlying patterns at defocus

Karl Chiou, Jerry Huang, S. Lee, Chih Yu Lee, Nail Tang, Janet Peng

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476987
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

The model-based OPC is considered in 0.13um and beyond generation. However, the accuracy of model-based OPC is based on the measurement of test patterns on bare silicon wafers using the optimized exposure condition. The through pitch patterns and systematic patterns should be contained in the test patterns design. Experiments showed that the accuracy of model would be constrained if the underlying pattern effects would not be considered. The CD performance at the defocus and process window would also suffer since not considering the underlying pattern effects. This CD performance at defocus level and process window will be worse at damascene process. In this paper, we propose a hybrid OPC to cover these issues. In this work, we can use a simple method to investigate the underlying impact on the target layer on which we want to implement OPC to improve the pattern fidelity. We can observe the impact of underlying layer by studying the CD of critical patterns at de-focus level. This experiment provides us the CD data for considering the underlying impact without relying on theoretical foundation. With the hybrid OPC, we can find the exposure latitude has been improved

Citation Download Citation

Karl Chiou, Jerry Huang, S. Lee, Chih Yu Lee, Nail Tang, and Janet Peng "Pattern fidelity improvement by considering the underlying patterns at defocus", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476987

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Critical dimension metrology

Semiconducting wafers

Metals

Model-based design

Data modeling

Distortion

Show All Keywords

Keywords/Phrases

Search In:

Publication Years