Two-dimensional G-MEEF theory and applications

Yuri Granik; Nicolas B. Cobb

doi:10.1117/12.476941

1 August 2002 Two-dimensional G-MEEF theory and applications

Yuri Granik, Nicolas B. Cobb

Author Affiliations +

Proceedings Volume 4754, Photomask and Next-Generation Lithography Mask Technology IX; (2002) https://doi.org/10.1117/12.476941
Event: Photomask and Next Generation Lithography Mask Technology IX, 2002, Yokohama, Japan

Abstract

Mask errors increasingly contribute into the CD error budget degrading quality of empirical OPC models and fidelity of the OPC features. Though the importance of studying mask error enhancements for the various feature types is well understood, the traditional MEEF theory embraces only simple features like dense lines or contacts, with a single degree of the mask distortion freedom. Complex mask shapes, including those that are routinely generated by OPC, or interactions between neighboring mask errors, have proven extremely difficult to analyze by the traditional MEEF theory. Motivated by the necessity to extend the traditional 1D approach, in previous works the authors introduced G-MEEF (Generalized Mask Error Enhancement) theory to explore complex 2D mask distortions. In this theory, mask and correspondent wafer errors were expressed as contour distortion vectors. The error enhancement is described by MEEM (Mask Error Enhancement Matrix) that transforms mask errors into the wafer distortions. MEEM captures complex effects of the self- and cross- enhancements when neighboring mask features collectively contribute into the wafer errors. Here we concentrate on G-MEEF applications. We study G-MEEF of SRAF structures and hammerheads. Inversion of the MEEM matrix can be used to conduct strict OPC corrections. We discuss different forms of OPC algorithms based upon this conversion.

Citation Download Citation

Yuri Granik and Nicolas B. Cobb "Two-dimensional G-MEEF theory and applications", Proc. SPIE 4754, Photomask and Next-Generation Lithography Mask Technology IX, (1 August 2002); https://doi.org/10.1117/12.476941

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