Design and characterization of levitated suspended rf inductors

Bohuslav Palan; Kholdoun Torki; Bernard Courtois; Miroslav Husak

doi:10.1117/12.462799

19 April 2002 Design and characterization of levitated suspended rf inductors

Bohuslav Palan, Kholdoun Torki, Bernard Courtois, Miroslav Husak

Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462799
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France

Abstract

This paper presents design of novel on-chip mi9cromachined spiral inductors developed in 0.8micrometers commercial CMOS technology. Proposed innovative architecture maximizes the quality factor Q. Suspended inductors can be placed vertically above the substrate, thus, the parasitic substrate effects are considerably reduced. Four designed passive inductors have values from 1nH to 7nH. The Q-factor greater than ten is estimated from calculations, and is experimentally verified by S-parameter measurements.

Citation Download Citation

Bohuslav Palan, Kholdoun Torki, Bernard Courtois, and Miroslav Husak "Design and characterization of levitated suspended rf inductors", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462799

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