Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD

Michal Jozwik; Andrei Sabac; Christophe Gorecki

doi:10.1117/12.462881

19 April 2002 Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD

Michal Jozwik, Andrei Sabac, Christophe Gorecki

Author Affiliations +

Proceedings Volume 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002; (2002) https://doi.org/10.1117/12.462881
Event: Symposium on Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, 2002, Cannes-Mandelieu, France

Abstract

The full-field interferometry is very well suited for evaluation of micromechanical and material properties of microsystems. In this paper, we presented a Twyman-Green interferometer for MEMS/MOEMS testing. The measurements of out-of-plan displacements of special silicon membranes with thin film of SiO_xN_y deposited by PECVD enable the analysis of opto=mechanical properties.

Citation Download Citation

Michal Jozwik, Andrei Sabac, and Christophe Gorecki "Optical interferometry investigation of internal stress and optomechanical characteristics of silicon-oxynitride thin films fabricated by PECVD", Proc. SPIE 4755, Design, Test, Integration, and Packaging of MEMS/MOEMS 2002, (19 April 2002); https://doi.org/10.1117/12.462881

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