Total dose effects in the auger transistor

Dmitry V. Gromov; Vadim V. Elesin; Aledxander Y. Nikiforov; Stanislav A. Polevich; Yury F. Adamov; V. G. Mokerov

doi:10.1117/12.463466

30 April 2002 Total dose effects in the auger transistor

Dmitry V. Gromov, Vadim V. Elesin, Aledxander Y. Nikiforov, Stanislav A. Polevich, Yury F. Adamov, V. G. Mokerov

Proceedings Volume 4761, Second Conference on Photonics for Transportation; (2002) https://doi.org/10.1117/12.463466
Event: Second Conference on Photonics for Transportation, 2001, Sochy, Russian Federation

Abstract

The total dose effects in the Auger Tunnel Emitter Transistor (Auger TETRAN) have been experimentally investigated. It was established, that DC characteristic i.e. the collector current and the current gain coefficient are sufficiently degraded under (gamma) -rays irradiation over 5.10⁶ rad(Si). An unusual non-monotonous behavior of the DC characteristic was also observed at a low collector voltage.

Citation Download Citation

Dmitry V. Gromov, Vadim V. Elesin, Aledxander Y. Nikiforov, Stanislav A. Polevich, Yury F. Adamov, and V. G. Mokerov "Total dose effects in the auger transistor", Proc. SPIE 4761, Second Conference on Photonics for Transportation, (30 April 2002); https://doi.org/10.1117/12.463466

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