Paper
16 August 2002 Printability of hard and soft defects in 193-nm lithography
Vicky Philipsen, Rik M. Jonckheere, Stephanie Kohlpoth, Christoph M. Friedrich, Juan Andres Torres
Author Affiliations +
Proceedings Volume 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents; (2002) https://doi.org/10.1117/12.479336
Event: 18th European Mask Conference on Mask Technology for Integrated Circuits and Micro-Components, 2002, Munich-Unterhaching, Germany
Abstract
A systematic attempt has been undertaken to investigate the printability of mask defects for 100nm lithography using 193nm wavelength. The main purpose is the study of soft defects (particles), but hard defects have been taken as a reference. A reticle is designed with programmed soft and chrome defects in cells with different densities. As soft defects resist dots are used. Printability is first assessed by simulation, using ProLith v7.0. Wafers are printed using QUASAR illumination and evaluated by a CD SEM. We demonstrate that aerial image simulations and AIS measurements can predict the qualitative trends in defect printability. A thorough quantitative analysis is presented.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vicky Philipsen, Rik M. Jonckheere, Stephanie Kohlpoth, Christoph M. Friedrich, and Juan Andres Torres "Printability of hard and soft defects in 193-nm lithography", Proc. SPIE 4764, 18th European Conference on Mask Technology for Integrated Circuits and Microcomponents, (16 August 2002); https://doi.org/10.1117/12.479336
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Cited by 3 scholarly publications and 10 patents.
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KEYWORDS
Reticles

Optical proximity correction

Photomasks

Scanning electron microscopy

Phase shifts

Opacity

Semiconducting wafers

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