Lithography and photoablation systems for microelectronics and optoelectronics: importance of laser beam shaping in system design

Kanti Jain

doi:10.1117/12.451644

24 October 2002 Lithography and photoablation systems for microelectronics and optoelectronics: importance of laser beam shaping in system design

Kanti Jain

Author Affiliations +

Proceedings Volume 4770, Laser Beam Shaping III; (2002) https://doi.org/10.1117/12.451644
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

As microelectronic and optoelectronic devices continue to make advances in speed, functionality, and levels of integration, demands on the fabrication equipment for higher resolution, large-format processing, and lower cost continue to accelerate. Excimer lasers, due to their high power, short wavelength, and low spatial coherence, are ideally suited for these systems. In the optical design of the illumination and imaging systems in lithography tools, laser beam shaping is a critical factor in optimizing three key characteristics: beam uniformity, beam geometry, and numerical aperture. In state-of-the-art systems, various beam homogenization techniques are employed to produce high uniform intensity distributions; a variety of beam geometries are implemented depending on the imaging system configurations; and the partial coherence factor is carefully controlled by optimum design of the illumination and imaging numerical apertures. In this paper we review several advanced lithography and photoablation system designs used in microelectronics and optoelectronics fabrication, and show how advanced beam shaping criteria have played an integral role in the overall tool design, making it possible to achieve large-area patterning with higher resolutions as well as higher throughputs.

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Kanti Jain "Lithography and photoablation systems for microelectronics and optoelectronics: importance of laser beam shaping in system design", Proc. SPIE 4770, Laser Beam Shaping III, (24 October 2002); https://doi.org/10.1117/12.451644

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