Ag-Sb-Te system for phase change optical data storage

Yagya Deva Sharma; Promod K. Bhatnagar

doi:10.1117/12.453720

11 November 2002 Ag-Sb-Te system for phase change optical data storage

Yagya Deva Sharma, Promod K. Bhatnagar

Proceedings Volume 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components; (2002) https://doi.org/10.1117/12.453720
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

For phase change optical data storage, several chalcogenide-based materials have been reported and are expected to replace the conventional magnetic disk. In the present work, preparation and characterization of the chalcogenide allow Ag_x - Sb _2(1-x) - Te _3(1-x) with different composition (x = 0.16, 0.18 and 0.20) has been presented. Samples were prepared using melt quenching technique and the films were grown by thermal evaporation system. The crystallization process of Ag- Sb- Te material was studied using differential thermal analysis (DTA) and Optical analysis (Transmittance and reflectance) respectively. The films were studied for both cases: before and after annealing. The Differential thermal analysis curves were recorded for different compositions and Glass transition temperature (T_g), crystallization temperature (T_c) and melting temperature (T_m) have been obtained. It may also be concluded that T_g/T_m ratio is closer to required condition for phase change optical data storage material. Thermal and optical analysis shows that the Ag - Sb- Te material is a potential candidate for phase change optical data storage. The optimized composition has also been obtained.

Citation Download Citation

Yagya Deva Sharma and Promod K. Bhatnagar "Ag-Sb-Te system for phase change optical data storage", Proc. SPIE 4779, Advanced Characterization Techniques for Optical, Semiconductor, and Data Storage Components, (11 November 2002); https://doi.org/10.1117/12.453720

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