Effects of p/n inhomogeneity on CdZnTe radiation detectors

Muren Chu; Sevag Terterian; David Ting; Ralph B. James; Marek Szawlowski; Gerald J. Visser

doi:10.1117/12.457056

10 January 2003 Effects of p/n inhomogeneity on CdZnTe radiation detectors

Muren Chu, Sevag Terterian, David Ting, Ralph B. James, Marek Szawlowski, Gerald J. Visser

Proceedings Volume 4784, X-Ray and Gamma-Ray Detectors and Applications IV; (2003) https://doi.org/10.1117/12.457056
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Spectrometer grade, room-temperature radiation detectors have been produced on Cd_0.90Zn_0.10Te grown by the low-pressure Bridgman technique. Small amount of indium has been used to compensate the uncompensated Cd vacancies for the crystals to be semi-insulating. The properties of the detectors are critically dependent on the amount of excess Te introduced into the growth melts of the Cd_0.90Zn_0.10Te crystals and the best detectors are fabricated from crystals grown with 1.5% excess Te. Detector resolution ⁵⁷Co and ²⁴¹Am radiation peaks are observed on all detectors expect the ones produced on Cd_0.90Zn_0.10Te grown from the melt in the stoichiometric condition. The lack of resolution of these stoichiometric grown detectors is explained by a p/n conduction-type inhomogeneity model.

Citation Download Citation

Muren Chu, Sevag Terterian, David Ting, Ralph B. James, Marek Szawlowski, and Gerald J. Visser "Effects of p/n inhomogeneity on CdZnTe radiation detectors", Proc. SPIE 4784, X-Ray and Gamma-Ray Detectors and Applications IV, (10 January 2003); https://doi.org/10.1117/12.457056

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