HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching

Tam T. Nguyen; John M. Dell; Charles A. Musca; Jarek Antoszewski; Lorenzo Faraone

doi:10.1117/12.452276

5 December 2002 HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching

Tam T. Nguyen, John M. Dell, Charles A. Musca, Jarek Antoszewski, Lorenzo Faraone

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.452276
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Reactive ion etching (RIE) is known to type convert p-type HgCdTe to n-type, thus providing a method for p-n junction formation for photodiode fabrication. Mid-wavelength infrared (MWIR) n-on-p photodiodes fabricated using RIE induced p-to-n type conversion have already been demonstrated and show excellent performance. This paper will report on the successful application of RIE junction formation technology for long-wavelength infrared (LWIR) HgCdTe photodiodes, and compares the device performance of photodiodes fabricated on vacancy and extrinsically doped p-type HgCdTe. The diode current versus bias voltage (I-V) characteristic of these devices have also been measured as a function of temperature in the range 20K to 200K with various junction areas. These results are compared in the light of detailed Hall measurement data obtained from type converted materials.

Citation Download Citation

Tam T. Nguyen, John M. Dell, Charles A. Musca, Jarek Antoszewski, and Lorenzo Faraone "HgCdTe long-wavelength infrared photovoltaic detectors formed by reactive ion etching", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.452276

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