Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

J. David Benson; Andrew J. Stoltz Jr.; Andrew W. Kaleczyc; Mike Martinka; Leo Anthony Almeida; Phillip R. Boyd; John H. Dinan

doi:10.1117/12.451921

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5 December 2002 Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches

J. David Benson, Andrew J. Stoltz Jr., Andrew W. Kaleczyc, Mike Martinka, Leo Anthony Almeida, Phillip R. Boyd, John H. Dinan

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Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.451921
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Factors that affect width and aspect ratio in electron cyclotron resonance (ECR) etched HgCdTe trenches are investigated. The ECR etch bias and anisotropy are determined by photoresist feature erosion rate. The physical characteristics of the trenches are attributed to ECR plasma etch chemistry.

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J. David Benson, Andrew J. Stoltz Jr., Andrew W. Kaleczyc, Mike Martinka, Leo Anthony Almeida, Phillip R. Boyd, and John H. Dinan "Influence of photoresist feature geometry on ECR plasma-etched HgCdTe trenches", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.451921

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