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5 December 2002 Infrared detectors on the basis of a-SiGe:H/c-Si heterostructures
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Abstract
The results of the investigation of the properties of a-SiGe:H/c-Si heterostructures fabricated by LF (55 kHz) PECVD are presented. The investigation of spectral characteristics of a-SiGe:H/c-Si heterostructure in the wavelength range from 500 to 1100 nm showed that the short-wave absorption edge is determined by optical gap of a-SiGe:H alloy. The position of maximum of specific photosensitivity shifts from 830 to 940 nm with the increase of germanium concentration in the a-SiGe:H alloy. It was established that in a-SiGe:H/c-Si heterostructures the multitunnelling capture-emission mechanism prevails in low voltage range (less than 1.0 V). In this case the emission of holes to the valence band of a-SiGe:H from the defect states caused by Ge dangling bonds predominate. When applied voltage is more than 1.5 V, space charge limited current is observed. In this case the rise of the current is provided by the thermal emission of electrons from the defect states associated with Si dangling bonds in the upper half of a-SiGe:H.
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Boris G. Budaguan, Alexei A. Sherchenkov, Alexander V. Mazurov, and Grigory L. Gorbulin "Infrared detectors on the basis of a-SiGe:H/c-Si heterostructures", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.451912
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