MBE growth of HgCdTe HOT detector heterostructures

Jun Zhao; Yongdong Zhou; Giacomo Badano; Yusuf Selamet; Christoph H. Grein; Sivalingam Sivananthan

doi:10.1117/12.452257

5 December 2002 MBE growth of HgCdTe HOT detector heterostructures

Jun Zhao, Yongdong Zhou, Giacomo Badano, Yusuf Selamet, Christoph H. Grein, Sivalingam Sivananthan

Proceedings Volume 4795, Materials for Infrared Detectors II; (2002) https://doi.org/10.1117/12.452257
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

Specially designed mercury cadmium telluride (Hg_1-xCd_xTe) p-ν-n⁺ heterostructures were grown by molecular beam epitaxy (MBE) on CdTe/Si and CdZnTe (211)B-oriented substrates for infrared photo-detector operation at near room temperature. Growth of this structure requires precise control over the crystal quality, compositional profiles, and donor and acceptor doping levels. The doping levels and density of Shockley-Read-Hall centers in the absorber layer must be low enough to realize the benefits of Auger suppression under non-equilibrium device operation. In order to avoid possible contamination from chemical compounds used in traditional substrate mounting methods, non-contact (In-free) substrate mounting was used to grow the structures. High-energy electron diffraction (RHEED) was implemented to develop a substrate thermocouple temperature ramping curve that maintains a constant epilayer temperature. The structures were characterized by FTIR, x-ray diffraction, and temperature dependent Hall measurements. High operating temperature (HOT) detectors were fabricated on these materials and showed good room-temperature response.

Citation Download Citation

Jun Zhao, Yongdong Zhou, Giacomo Badano, Yusuf Selamet, Christoph H. Grein, and Sivalingam Sivananthan "MBE growth of HgCdTe HOT detector heterostructures", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.452257

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