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5 December 2002 Performance analysis of an integrated pin/MISS OEIC for high-current photosensing applications
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Abstract
In this paper, a new pin/MISS photoreceiver with very high output current has been developed successfully by using the combination of the amorphous silicon germanium alloy pin photodiode and metal insulator semiconductor switch (MISS) device. The developed photoreceiver uses the pin photodiode as the light absorption structure and light wavelength selector and the MISS device as the photocurrent amplifier. Based on the experimental results, the photoreceiver yields a very high output current of 3.2 mA at a voltage bias of 6V under an incident light power Pin equals 100 μW and has a rise time of 465 μs at a load resistance R equals 1 KΩ. The peak response wavelength of the diode is at 905 nm, i.e. infrared light. Thus the high output current pin/Miss photoreceiver provides a good candidate for the IR OEIC's applications.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jyh-Jier Ho, Yean-Kuen Fang, and Chin-Ying Chen "Performance analysis of an integrated pin/MISS OEIC for high-current photosensing applications", Proc. SPIE 4795, Materials for Infrared Detectors II, (5 December 2002); https://doi.org/10.1117/12.451892
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