Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge: waveguide

Abdalla M. Darwish; A. Elsamadecy; Brent D. Koplitz; Harold J. Colclough; G. Gomlak; R. Combs; A. Jalbout; Mohan D. Aggarwal; Dariush Ila

doi:10.1117/12.453582

20 November 2002 Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge:waveguide

Abdalla M. Darwish, A. Elsamadecy, Brent D. Koplitz, Harold J. Colclough, G. Gomlak, R. Combs, A. Jalbout, Mohan D. Aggarwal, Dariush Ila

Author Affiliations +

Proceedings Volume 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII; (2002) https://doi.org/10.1117/12.453582
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

The feasibility of using the combined advantage of ion implantation and laser ablation to form a waveguide has been investigated in SiC implanted with Oxygen 2 MeV wiht concentration of 2-3 × 10¹⁷ ions/cm² and Au²⁺ 2 MeV with concentration of 1x10¹⁶ ions/cm². Then a 2-micron Ge thin film was deposited on the surface with pulsed laser ablation to form a multilayer waveguide. It is shown that the waveguide acts as a laser wavelength differentiator under thermal stress achieving high selcitivy of wavelength in 9.6 micron using CO₂ laser. Electron paramagnetic results ffor this material will be presented as well to show the possible sites of doped and implanted ions.

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Abdalla M. Darwish, A. Elsamadecy, Brent D. Koplitz, Harold J. Colclough, G. Gomlak, R. Combs, A. Jalbout, Mohan D. Aggarwal, and Dariush Ila "Investigation of nonlinear optical properties of ion-implanted and high-pulse laser deposition SiC:Ge:waveguide", Proc. SPIE 4803, Photorefractive Fiber and Crystal Devices: Materials, Optical Properties, and Applications VIII, (20 November 2002); https://doi.org/10.1117/12.453582

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