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7 November 2002 Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+δ
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Epitaxial strain in La2-xSrxCuO4+δ thin films (0 ⩽ x ⩽ 0.30) is controlled by using SrLaAlO4 buffer layers of different thicknesses on SrTiO3 substrates. We found that compressive epitaxial strain results in higher Tc for all the Sr concentrations. Better oxygenation by cooling the films in ozone/molecular oxygen mixture also leads to higher Tc. In undoped and lightly-doped ultrathin films, the samples are insulating under tensile strain, but superconducting when the strain is sufficiently compressive. We suggest that the epitaxial strain affects the insertion of interstitial oxygen, which is responsible for the observed effects. Hall measurements confirm the change in carrier density in films of different strain. The Hall angle also changes with epitaxial strain. The epitaxial strain dependence of the slope in the T2 dependence of the cotangent of the Hall angle is different for underdoped and optimally-doped samples.
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Xiaoxing Xi, Weidong Si, X. H. Zeng, A. Soukiassian, C. L. Jia, and K. Urban "Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+δ", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002);

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