Translator Disclaimer
Paper
7 November 2002 Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+δ
Author Affiliations +
Abstract
Epitaxial strain in La2-xSrxCuO4+δ thin films (0 ⩽ x ⩽ 0.30) is controlled by using SrLaAlO4 buffer layers of different thicknesses on SrTiO3 substrates. We found that compressive epitaxial strain results in higher Tc for all the Sr concentrations. Better oxygenation by cooling the films in ozone/molecular oxygen mixture also leads to higher Tc. In undoped and lightly-doped ultrathin films, the samples are insulating under tensile strain, but superconducting when the strain is sufficiently compressive. We suggest that the epitaxial strain affects the insertion of interstitial oxygen, which is responsible for the observed effects. Hall measurements confirm the change in carrier density in films of different strain. The Hall angle also changes with epitaxial strain. The epitaxial strain dependence of the slope in the T2 dependence of the cotangent of the Hall angle is different for underdoped and optimally-doped samples.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xiaoxing Xi, Weidong Si, X. H. Zeng, A. Soukiassian, C. L. Jia, and K. Urban "Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+δ", Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); https://doi.org/10.1117/12.457583
PROCEEDINGS
10 PAGES


SHARE
Advertisement
Advertisement
Back to Top