You have requested a machine translation of selected content from our databases. This functionality is provided solely for your convenience and is in no way intended to replace human translation. Neither SPIE nor the owners and publishers of the content make, and they explicitly disclaim, any express or implied representations or warranties of any kind, including, without limitation, representations and warranties as to the functionality of the translation feature or the accuracy or completeness of the translations.
Translations are not retained in our system. Your use of this feature and the translations is subject to all use restrictions contained in the Terms and Conditions of Use of the SPIE website.
7 November 2002Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+δ
Epitaxial strain in La2-xSrxCuO4+δ thin films (0 ⩽ x ⩽ 0.30) is controlled by using SrLaAlO4 buffer layers of different thicknesses on SrTiO3 substrates. We found that compressive epitaxial strain results in higher Tc for all the Sr concentrations. Better oxygenation by cooling the films in ozone/molecular oxygen mixture also leads to higher Tc. In undoped and lightly-doped ultrathin films, the samples are insulating under tensile strain, but superconducting when the strain is sufficiently compressive. We suggest that the epitaxial strain affects the insertion of interstitial oxygen, which is responsible for the observed effects. Hall measurements confirm the change in carrier density in films of different strain. The Hall angle also changes with epitaxial strain. The epitaxial strain dependence of the slope in the T2 dependence of the cotangent of the Hall angle is different for underdoped and optimally-doped samples.
The alert did not successfully save. Please try again later.
Xiaoxing Xi, Weidong Si, X. H. Zeng, A. Soukiassian, C. L. Jia, K. Urban, "Epitaxial strain effects on superconducting and transport properties of La2-xSrxCuO4+deltasign," Proc. SPIE 4811, Superconducting and Related Oxides: Physics and Nanoengineering V, (7 November 2002); https://doi.org/10.1117/12.457583