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23 January 2003 High-resolution QWIP FPAs for the 8- to 12-μm and 3- to 5-μm regimes
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We report on our QWIP focal plane array (FPA) developments for the 8 - 12 μm and 3 - 5 μm regimes. In the long-wavelength infrared, we have realized several types of QWIP FPAs with array sizes from 256 × 256 to 640 × 512 pixels and with different active regions, giving rise to photoconductive and photovoltaic operation, respectively. Best thermal resolution in the 8 - 12 μm regime is obtained with low-noise QWIP FPAs which are based on a photovoltaic QWIP structure. Special emphasis is given to our work on a 640 × 512 mid-wave QWIP FPA, which is based on strained InGaAs/AlGaAs quantum wells lattice matched to a GaAs substrate. By optimizing the carrier concentration and the geometry of the two-dimensional grating with 1.65 μm period, a high quantum efficiency of more than 10% in the long-wavelength part of the 3 - 5 µm regime is achieved, resulting in an excellent thermal resolution of only 14.3 mK.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Harald Schneider, Joachim Fleissner, Robert Rehm, Martin Walther, Wilfried Pletschen, Peter Koidl, Guenter Weimann, Johann Ziegler, Rainer Breiter, and Wolfgang A. Cabanski "High-resolution QWIP FPAs for the 8- to 12-μm and 3- to 5-μm regimes", Proc. SPIE 4820, Infrared Technology and Applications XXVIII, (23 January 2003);

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