Efficient optical sources in silicon using dislocation engineering

Russell M. Gwilliam; M. A. Lourenco; S. Galata; Kevin P. Homewood; G. Shao

doi:10.1117/12.452222

11 November 2002 Efficient optical sources in silicon using dislocation engineering

Russell M. Gwilliam, M. A. Lourenco, S. Galata, Kevin P. Homewood, G. Shao

Proceedings Volume 4823, Photonics for Space Environments VIII; (2002) https://doi.org/10.1117/12.452222
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

In this paper we describe a new approach to the manufacture of Si based optical emitters. Dislocation engineering, using entirely ULSI compatible technology has been shown to be a viable route to the production of efficient LED's operating at room temperature. External quantum efficiencies of ~ 10^-4 have been realised for un-packaged devices operating at room temperature. This approach has also been shown to yield great benefits in the control of thermal quenching for other material systems, such as the FeSi₂, where room temperature operational devices based at 1.5um have been demonstrated

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Russell M. Gwilliam, M. A. Lourenco, S. Galata, Kevin P. Homewood, and G. Shao "Efficient optical sources in silicon using dislocation engineering", Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); https://doi.org/10.1117/12.452222

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