Nanostructures for formation on surface of 6H-SiC by laser radiation

Arthur Medvids; Leonid L. Fedorenko; Petro M. Lytvyn; Lucel Serghe; Tomuo Yamaguchi; Mitsuru Aoyama

doi:10.1117/12.530053

19 November 2003 Nanostructures for formation on surface of 6H-SiC by laser radiation

Arthur Medvids, Leonid L. Fedorenko, Petro M. Lytvyn, Lucel Serghe, Tomuo Yamaguchi, Mitsuru Aoyama

Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.530053
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy

Abstract

Formation of nano-structures on a surface of 6H-SiC:N,B and SiC:N under irradiation by the N₂ pulsed laser was found and studied (wavelength is 337 nm, pulse duration is 10 ns, energy of pulse is 1.6 • 10³J). Formation of the nano-hills is the beginning stage of laser ablation. These nanostructures have shape of a hill and their creation corresponds to the beginning stage of laser ablation. Position of the nano-hills depends on the distribution of intensity of laser radiation. The nano-hills arise along the circular line around the maximum of focused spot. The threshold intensity of laser rediation for formation of nano-structures is 5 GW/cm². We propose two models for explanation of the nano-hills formation on the irradiated surface of 6H-SiC based on a liquid phase formation in the bulk of the semiconductor under a thin solid state layer. The results of photoluminescence and morphology by Atomic Force Microscope studies of the irradiated surface allow us to conclude that the concentration of nitrogen atoms increases. The increase of the nitrogen concentration in the hills is explained by presence of the temperature gradient field in the irradiated region of 6H-SiC surface caused by the strongly absorbed laser radiation. According to the Thermogradient effect the N atoms move towards the irradiated surface, while the atoms of B -- into the bulk of SiC. As is known the N atoms are donors and the B atoms are acceptors in SiC therefore after cooling of the semiconductor a p-n junction should be created. (Summary only available)

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Arthur Medvids, Leonid L. Fedorenko, Petro M. Lytvyn, Lucel Serghe, Tomuo Yamaguchi, and Mitsuru Aoyama "Nanostructures for formation on surface of 6H-SiC by laser radiation", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.530053

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KEYWORDS

Chemical species

Silicon carbide

Nanostructures

Semiconductors

Liquids

Nitrogen

Laser ablation

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