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19 November 2003 Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.530047
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
Lithographic exposures belong to the most critical process steps in the manufacturing of microelectronic circuits. Almost all exposures are performed over nonplanar wafers. The backscattering of light from topographic features on these wafers is of increasing concern for the accuracy and stability of lithographic processes. We combine standard imaging theory and finite-difference time-domain (FDTD) algorithms to simulate several typical geometries. Consequences with respect to typical lithographic process parameters are discussed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Andreas Erdmann and Christian K. Kalus "Rigorous simulation of lithographic exposure of photoresist over a nonplanar wafer", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.530047
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