Paper
19 November 2003 Separation of bulk lifetime and surface recombination velocity by multi-wavelength technique
Luigi Sirleto, Andrea Irace, Gianpaolo F. Vitale, Luigi Zeni, Antonello Cutolo
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Proceedings Volume 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life; (2003) https://doi.org/10.1117/12.525491
Event: 19th Congress of the International Commission for Optics: Optics for the Quality of Life, 2002, Florence, Italy
Abstract
In this paper a contactless, all-optical and non-destructive technique for simultaneous measurement of minority carrier recombination lifetime and surface recombination velocity is presented. The principle is based upon measurement, at low injection level, of the free carrier optical absorption transient probed by an infrared beam following electron-hole pair excitation by a pulsed laser beam working at several wavelengths. Being contactless and non-destructive with respect to the surface to be analyzed, the method is appealing for routine lifetime characterization.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luigi Sirleto, Andrea Irace, Gianpaolo F. Vitale, Luigi Zeni, and Antonello Cutolo "Separation of bulk lifetime and surface recombination velocity by multi-wavelength technique", Proc. SPIE 4829, 19th Congress of the International Commission for Optics: Optics for the Quality of Life, (19 November 2003); https://doi.org/10.1117/12.525491
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KEYWORDS
Nondestructive evaluation

Silicon

Absorption

Laser beam diagnostics

Semiconducting wafers

Semiconductor lasers

Optical parametric oscillators

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