Paper
19 February 2003 Crystalization of sol-gel derived precursor zinc oxide file during KrF excimer laser irradiation
Kazuyuki Hayashi, Toshihiko Ooie, Toshimi Nagase, Tatsuya Shinozaki, Takao Araki
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.499712
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
The present paper describes a study on the crystallization of a sol-gel derived precursor ZnO film during and after the irradiation of an excimer laser. The temporal change of the structure of ZnO films was discussed based on the time-resolved signal of a reflected and a transmitted laser beam during the excimer laser irradiation. The surface morphology of the films was analyzed by atomic force microscope (AFM). The pulse-to-pulse changes of integrated signals reflected the surface conditions of the ZnO film. In time-resolved measurement, significant changes of both signals were observed during the first pulse.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Kazuyuki Hayashi, Toshihiko Ooie, Toshimi Nagase, Tatsuya Shinozaki, and Takao Araki "Crystalization of sol-gel derived precursor zinc oxide file during KrF excimer laser irradiation", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); https://doi.org/10.1117/12.499712
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KEYWORDS
Zinc oxide

Excimer lasers

Reflectivity

Crystals

Laser crystals

Transmittance

Atomic force microscopy

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