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19 February 2003 Laser ablation of GaN/sapphire structure for LED
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Proceedings Volume 4830, Third International Symposium on Laser Precision Microfabrication; (2003) https://doi.org/10.1117/12.486561
Event: LAMP 2002: International Congress on Laser Advanced Materials Processing, 2002, Osaka, Japan
Abstract
Laser ablation of GaN thin film and GaN/Sapphire structure for the application o flight emitting diodes (LEDs) has been performed. Edge quality and surface roughness of the specimens are compared using scanning electron microscopy (SEM) and atomic force microscopy (AFM) after laser processing by the 3rd harmonic Nd:YAG laser, KrF excimer laser and Ti-sapphire femtosecond laser. Dependence of laser ablation rate on the processing parameters, such as laser fluence, scanning speed and pulse repetition rate with the laser irradiation is also investigated. Device characteristics of the specimens after the laser microprocessing are also analyzed.
© (2003) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hwee Ming Lam, MingHui Hong, Shu Yuan, and Tow Chong Chong "Laser ablation of GaN/sapphire structure for LED", Proc. SPIE 4830, Third International Symposium on Laser Precision Microfabrication, (19 February 2003); https://doi.org/10.1117/12.486561
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