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27 August 2003 Study of femtosecond laser interaction with wafer-grade silicon
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In this paper the interaction of ultra-short pulses (150fs) of laser radiation (wavelength 775nm) over a range of fluences with wafer grade Silicon material in air was analysed using optical and electron microscopy. Optical microscopy was performed by the use of a white light interferometer and a high power optical microscope (magnification 100X). The resolution of both these methods was only sufficient to resolve large dimensions relative to the wavelength of light. For smaller geometries and greater detail, electron microscopy (resolution 1.5nm, 1KV) was used to obtain more information due to its greater resolution and depth of focus. When used in conjunction with surface, cross sectional and transmission imaging, this technique provided the greatest level of detail on the physical processes involved. Using these analysis techniques it was possible to provide a qualitative understanding of the ablation process as a function of laser fluence and to quantitatively describe the depth per pulse over a range of laser fluences, from which a value for the ablation threshold for Silicon (0.17Jcm-2) could be derived.
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Edward Coyne, Jonathan Magee, Paul Mannion, and Gerard M. O'Connor "Study of femtosecond laser interaction with wafer-grade silicon", Proc. SPIE 4876, Opto-Ireland 2002: Optics and Photonics Technologies and Applications, (27 August 2003);


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