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Chemically amplified resist (CAR) provides superior lithographic performance compared to traditional e-beam resists in production maskmaking. Parameters benefiting the most are contrast, resolution, and sensitivity. In spite of CAR's advantages, defect control and tighter 50KeV e-beam CAR process restrictions are significantly more critical thanks to smaller geometries, tighter CD specifications, and optical proximity correction (OPC) for 90nm node mask technology. Among defect root causes, resist development is considered to be the one of the most important steps because post-development residue can generate printable defects on finished masks.
We investigated the CAR development process across different resist development methods, such as binary and fan-type nozzle spin spray, and puddle development. Several high density binary and embedded-attenuated phase shift masks (EAPSMs) with 70% clear area in the main pattern field were evaluated in an effort to identify and contain post-develop defects in a typical mask production flow. Development step process residue was examined at the after-develop inspection (ADI) step and scanning electron microscopy (SEM) was used for individual defect review. The KLA-Tencor SLF77 TeraStar inspection tool was used to inspect patterns after the development, Cr/MoSiON layer dry etch, and clean steps. The effectiveness of the various CAR development methods has been also studied following development, dry etch, and cleaning inspection by using identical binary and EAPSM masks from production. The mechanism and defect source during the stepwise process and inspections were scrutinized and discussed.
Experimental results showed that stepwise process inspection was effective in identifying defects and their sources to prevent defects, and in optimizing each process step. It was found that CAR development and dry etch processes are the most important process steps to control defects in CAR-based mask production. Suggested optimized develop process parameters for 90nm-node mask
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