Cr and TaN absorber mask etch CD performance study for extreme-ultraviolet lithography

Guojing Zhang; Pei-yang Yan

doi:10.1117/12.468213

27 December 2002 Cr and TaN Absorber Mask Etch CD Performance Study For Extreme Ultraviolet Lithography

Guojing Zhang, Pei-yang Yan

Author Affiliations +

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.468213
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

Extreme Ultraviolet Lithography (EUVL) is the leading candidate for the 45 nm node technology and beyond. A mask film structure and material selection become increasingly important for a success in the EUVL mask process development. Etch CD performance is considered in the material selection of an EUV mask absorber stack. This paper reports the study of etch CD performance and pattern loading effects in the plasma etch on two potential absorber materials of Cr and TaN. The etch process was experimentally setup on wafer samples and two different film etches were conducted in the same etch chamber. The CD data was collected on an SEM and was used for the CD performance analysis and comparison. In this study, it was found that the process etch CD bias in the TaN etch was significantly smaller than that in the Cr etch due to a fast etch rate of the TaN etch. The variation of the etch CD bias in the TaN etch was slightly higher than that in the Cr etch. The global pattern density changes had less impact to the Cr etch bias than the TaN etch bias.

Citation Download Citation

Guojing Zhang and Pei-yang Yan "Cr and TaN Absorber Mask Etch CD Performance Study For Extreme Ultraviolet Lithography", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.468213

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