Enhancement of CD uniformity and throughput with KrF photomask repeater

Tae-Joong Ha; Yong-Kyoo Choi; Oscar Han

doi:10.1117/12.467494

27 December 2002 Enhancement of CD uniformity and throughput with KrF photomask repeater

Tae-Joong Ha, Yong-Kyoo Choi, Oscar Han

Proceedings Volume 4889, 22nd Annual BACUS Symposium on Photomask Technology; (2002) https://doi.org/10.1117/12.467494
Event: Photomask Technology 2002, 2002, Monterey, CA, United States

Abstract

It is intended to clarify the feasibility of 0.15μm generation mask fabrication with the photomask repeater that is based on a KrF stepper(step-and-repeat exposure system). In a photomask repeater patterning, a daughter mask is exposed to KrF light through a mother mask. Inter-field registration accuracy(3sigma) is 14.9nm in X direction and 29.1nm in Y direction within a 100mm×100mm area on a daughter mask and intra-field registration accuracy(3sigma) is 21nm in X direction and 26nm in Y direction within a 18.4mm×23.0mm field on a daughter mask. The registration error within the field on a daughter mask can be reduced to about 13.5nm(range) by compensating for the registration error to a mother mask. Inter-field CD uniformity(3sigma) is 8nm in 100mm×100mm area on a daughter mask and intra-field CD uniformity (3sigma) is 24nm within a 18.4mm×23.0mm field on a daughter mask. The intra-field CD uniformity (3sigma) can be improved into 15nm by compensating for the CD error to a mother mask . In order to satisfy the 30nm registration and 15nm CD uniformity specification of a 0.15μm generation mask, we need to reduce the inter-field registration error with removing the backside defect of a daughter mask and improve the intra-field CD uniformity by changing the dose distribution of the photomask repeater.

Citation Download Citation

Tae-Joong Ha, Yong-Kyoo Choi, and Oscar Han "Enhancement of CD uniformity and throughput with KrF photomask repeater", Proc. SPIE 4889, 22nd Annual BACUS Symposium on Photomask Technology, (27 December 2002); https://doi.org/10.1117/12.467494

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KEYWORDS

Photomasks

Image processing

Critical dimension metrology

Optical proximity correction

Mask making

Contamination

Electron beam lithography

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